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475 亿个元件
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元件目录
| 元件编号 | 数量 | 制造商 | 日期编码 | 描述 | |
|---|---|---|---|---|---|
| 1N5404 | 34 | GI | 9052 | DIODE | 具体要求 |
| 1N5404-E3/54 | 598 | VISHAY | 0727 | Diode 1N 5404 | 具体要求 |
| 1N5404-E3/54 | 350 | VISHAY | 1240 | DIODE REDRESSEMENT | 具体要求 |
| 1N5406 | 29 | FAGOR | - | DIODE 1N5406 | 具体要求 |
| 1N5406 | 42 | - | - | DIODE 1N5406 | 具体要求 |
| 1N5406 | 5 | TAIWAN-SEMI | - | - | 具体要求 |
| 1N5406 | 3 | MOTOROLA | - | - | 具体要求 |
| 1N5406 | 33 | GI | 8542 | DIODE | 具体要求 |
| 1N5406 | 48 | MOTOROLA | 9325 | DIODE | 具体要求 |
| 1N5406GP | 127 | FAGOR | - | DIODE-SI*REC-AXL 600V*600V*3A*0s 1N5406* | 具体要求 |
| 1N5406RL | 1000 | - | 1N5406RL | 具体要求 | |
| 1N5407 | 735 | Thomson | 8528 | Diodes Case-267-03 Plastique | 具体要求 |
| 1N5407 | 1400 | VISHAY | 0635 | Redresseurs 3.0 Amp 800 Volt | 具体要求 |
| 1N5407 | 102 | GI | 9319 | DIODE | 具体要求 |
| 1N5407RLG | 665 | ON SEMICONDUCTOR | 0701 | DIODE 1N5407 DO201AD | 具体要求 |
| 1N5408 | 6 | VISHAY | 1545 | DIODE | 具体要求 |
| 1N5408 | 195 | HY-ELECTRONIC | - | SEMI-CONDUCTEUR.DIO | 具体要求 |
| 1N5408 | 7 | IR | - | - | 具体要求 |
| 1N5408 | 500 | MIC | - | DIODE 3A | 具体要求 |
| 1N5416 | 412 | GS | 9948 | DIODE | 具体要求 |
| 1N5417 | 1000 | - | - | 具体要求 | |
| 1N5418 | 6 | Telefunken | - | DIODE SI REDRESSEMENT 1N5418 | 具体要求 |
| 1N5418 | 63 | SEMTECH | - | DIODE SEMTECH 1N 5418 | 具体要求 |
| 1N5418 | 10393 | GENERAL SEMICONDUCTOR | 9828 | DIODE 1N5418 | 具体要求 |
| 1N5418 | 18 | - | DIODE REDRESS 1N5418 400V 3A | 具体要求 | |
| 1N5418 | 9 | MICROSEMI | - | DIODE 1N5418 | 具体要求 |
| 1N5420 | 59 | MICROSEMI | - | DIODE 1N5420 | 具体要求 |
| 1N5420 | 31 | MICROSEMI | 1549 | DIODE 1N5420 | 具体要求 |
| 1N5522B-1JANTX | 1 | MSC | - | - | 具体要求 |
| 1N5551US | 9 | MICROSEMI USA | - | DIO DIODE | 具体要求 |
| 1N5615 | 40 | GS | - | DIODE 1N5615/B | 具体要求 |
| 1N5615 | 405 | MICROSEMI | - | DIO AXIA 200V 2A | 具体要求 |
| 1N5615 | 405 | SEMTECH | - | DIO AXIA 200V 2A | 具体要求 |
| 1N5615 | 405 | SENSITRON | - | DIO AXIA 200V 2A | 具体要求 |
| 1N5615 | 405 | SSDV | - | DIO AXIA 200V 2A | 具体要求 |
| 1N5615 | 405 | VISHAY | - | DIO AXIA 200V 2A | 具体要求 |
| 1N5615 | 27 | MICROSEMI | 1029 | DIODE RDR VR 200V 1A 20005013000 NRT | 具体要求 |
| 1N5615GP | 243 | GS | 1335 | SEMI-CONDUCTEUR.DIO | 具体要求 |
| 1N5616 | 48 | GI General Instrument | 8726 | Diodes DO-204AP Glass | 具体要求 |
| 1N5617 | 85 | UNITRODE | - | 1N5617 400V 1A BDE | 具体要求 |
| 1N5617 | 3 | ST-MICROELECTRONICS | -- | DIODE REDRESSEMENT | 具体要求 |
| 1N5617 | 282 | - | DIODE 99114665 TYR | 具体要求 | |
| 1N5617GP-E3/54 | 92 | VISHAY | - | TRAD DO15 Diode de redressement I0:01A V | 具体要求 |
| 1N5618 | 36 | - | - | DIODE ZENER 1N5618 | 具体要求 |
| 1N5618JANTX | 4 | - | DIOD MSC 1N5618JANTX SANTAANA | 具体要求 | |
| 1N5618MSC | 486 | - | D 1N5618MSC | 具体要求 | |
| 1N5619 | 6 | - | DIODE DE REDRESSEMENT | 具体要求 | |
| 1N5619 | 1522 | GS | - | DIODE 1N 5619 GENERAL SEMICOND | 具体要求 |
| 1N5619 | 296 | MICROSEMI | - | DIO AXIA 600V 1A | 具体要求 |
| 1N5619 | 296 | SEMTECH | - | DIO AXIA 600V 1A | 具体要求 |
| 1N5619 | 296 | STM | - | DIO AXIA 600V 1A | 具体要求 |
| 1N5619 | 296 | VISHAY | - | DIO AXIA 600V 1A | 具体要求 |
| 1N5620 | 44 | GENERAL INSTRUMENT | - | DIODE ZENER 1N5620 SOD57 | 具体要求 |
| 1N5621 | 2 | - | DIODE REDRES. SEMTECH 1N 5621 | 具体要求 | |
| 1N5621 | 389 | MICROSEMI | - | DIODE 1N5621 | 具体要求 |
| 1N5622 | 200 | DSI | - | - | 具体要求 |
| 1N5623 | 2 | SEMTECH | 1993 | DIODE 1000V 1A | 具体要求 |
| 1N5623GP-E3/54 | 3840 | VISHAY | 0935 | Diode | 具体要求 |
| 1N5624 | 29 | GI | - | - | 具体要求 |
| 1N5624 | 45 | GI | - | DIODE 1N5624 3A 200V | 具体要求 |
| 1N5625 | 180 | GI | 9436 | DIODE | 具体要求 |
| 1N5626 | 157 | GENERAL INSTRUMENT | 9120 | 1N 5626 | 具体要求 |
| 1N5627 | 1117 | GENERAL SEMICONDUCTOR | 9948 | DIODE 1N5627 | 具体要求 |
| 1N5627 | 4 | GENERAL SEMICONDUCTOR | 9932 | DIODE REDRESSEMENT | 具体要求 |
| 1N5629A | 2 | SI | 8149 | 1N5629A DIODE | 具体要求 |
| 1N5630A | 13 | GENERAL SEMICONDUCTOR | 89 | 1N5630A DIODE | 具体要求 |
| 1N5630A | 206 | GSI | - | DIO DO13 1.5KW 6.4V | 具体要求 |
| 1N5630A | 206 | MICROSEMI | - | DIO DO13 1.5KW 6.4V | 具体要求 |
| 1N5630A | 206 | SEMICON | - | DIO DO13 1.5KW 6.4V | 具体要求 |
| 1N5630A | 206 | SEMITRC | - | DIO DO13 1.5KW 6.4V | 具体要求 |
| 1N5630A | 206 | STM | - | DIO DO13 1.5KW 6.4V | 具体要求 |
| 1N5630A | 40 | THOMSON | 8638 | DIODE | 具体要求 |
| 1N5637 | 7 | ST | 9113 | DIODE TRANSIL UNIDIR. 1N5637 | 具体要求 |
| 1N5637A | 3 | SEQ | - | - | 具体要求 |
| 1N5637A | 3 | MICROSEMI | - | TRAD DO13 axiale Diode transil rapide un | 具体要求 |
| 1N5638A | 4 | 0120 | TVS DIODE 13.6V 22.5V DO13 A1219818 | 具体要求 | |
| 1N5640A | 5 | MICROSEMI | - | TRAD DO13 axiale Diode transil rapide un | 具体要求 |
| 1N5642A | 777 | NJS | 9528 | DIODE METAL | 具体要求 |
| 1N5644A | 9 | MICROSEMI | - | TRAD DO13 axiale Diode transil rapide un | 具体要求 |
| 1N5645A | 3 | ST | 9118 | Transient Voltage Suppressors DO-13 Méta | 具体要求 |
| 1N5645A | 6 | MICROSEMI | - | TRAD DO13 axiale Diode transil rapide un | 具体要求 |
| 1N5645A | 169 | MICROSEMI | 9745 | DIODE | 具体要求 |
| 1N5646A | 4 | THOMSON | 8621 | DIODE TRANSIL 1N5646A UNIDIREC | 具体要求 |
| 1N5646A | 3 | - | - | DIODE TRANSIL 1N5646A UNIDIREC | 具体要求 |
| 1N5646A | 1 | MICROSEMI | - | DIODE 1N5646 | 具体要求 |
| 1N5646A | 3 | ST | 92+ | - | 具体要求 |
| 1N5646AE3 | 183 | MICROCHIP | 0652 | Suppresseurs ESD / diodes TVS TVS | 具体要求 |
| 1N5647A | 63 | MICROSEMI | - | - | 具体要求 |
| 1N5647A | 257 | MSC | - | DIODE 1N5647 | 具体要求 |
| 1N5647A | 23 | MICROSEMI | - | TRAD DO13 Diode zener TVS Vr:33.3VWM 53. | 具体要求 |
| 1N5648A | 16 | MICROSEMI | N/A | - | 具体要求 |
| 1N5648A | 1 | MICROSEMI | - | TRAD DO13 axiale Diode transil rapide un | 具体要求 |
| 1N5650 | 61 | MICROSEMI | - | TRANSIL UNI | 具体要求 |
| 1N5650A | 2 | SI | 7618 | 1N5650 DIODE | 具体要求 |
| 1N5651A | 154 | MICROSEMI CORP | 02 | DIODE 1N5651A | 具体要求 |
| 1N5651-A | 623 | - | DIT 1N5651 | 具体要求 | |
| 1N5652 | 771 | MICROSEMI | - | TRANSIL UNI | 具体要求 |
| 1N5653 | 20 | ST | 0809 | TRANSIL UNI STOCK STRAT. | 具体要求 |
| 1N5653A | 73 | MICROSEMI | N/A | - | 具体要求 |
| 1N5653A | 10 | Thomson | 8317 | Transient Voltage Suppressors DO-13 Méta | 具体要求 |
| 1N5653A | 68 | MICROSEMI | 0944 | ESD Suppressors / TVS Diodes A1237051 T | 具体要求 |
| 1N5654A | 100 | MICROSEMI | 9813 | DIODE METAL AXIAL A1237052 | 具体要求 |
| 1N5657 | 11 | THOMSON | 8139 | DIODE | 具体要求 |
| 1N5659A | 169 | - | - | TRANSIL UNI STOCK STRATEGIQUE | 具体要求 |
| 1N5660A | 3 | ST | 9340 | TRANSIENT SUPPRESSOR DIODE SINGLE UNIDI | 具体要求 |
| 1N5660A | 71 | MSC | - | TRANSIL UNI | 具体要求 |
| 1N5661A | 3 | MSC | - | TRANSIL UNI | 具体要求 |
| 1N5661A | 7 | STMICROELECTRONICS | 9217 | TRANSIL UNI | 具体要求 |
| 1N5662A | 98 | MSC | 0030 | TRANSIENT SUPPRESSOR DIODE SINGLE UNIDIR | 具体要求 |
| 1N5663A | 15 | Thomson | 8319 | Transient Voltage Suppressors DO-13 Méta | 具体要求 |
| 1N5664A | 138 | MSC | 0335 | DIODE METAL | 具体要求 |
| 1N5665A | 133 | MSC | - | DIODE METAL | 具体要求 |
| 1N5687 | 84 | THOMSON | 8209 | - | 具体要求 |
| 1N5711 | 69 | ST | - | DIODE SCHOTTKY ST551DIODES | 具体要求 |
| 1N5711 | 23 | ST | - | DSCHO70V15mA430mWDO35 | 具体要求 |
| 1N5711W-7-F | 791 | DIODES | - | DIO SCHOTT | 具体要求 |
| 1N5711W-7-F | 313 | DIODES | 1230 | DIO SCHOTT | 具体要求 |
| 1N5712 | 109 | HP | 9828 | - | 具体要求 |
| 1N5712 | 57 | HP | 9207 | DIODE SCHOTTKY | 具体要求 |
| 1N5802 | 379 | UNITRODE | - | DIODE | 具体要求 |
| 1N5806 | 10 | MICROSEMI | 0411 | DIODE SIGNAL 1N5806 BOITIER DO41 | 具体要求 |
| 1N5806 | 659 | SOLID STATES | - | DIODE 1N5806 FAR/1713225 | 具体要求 |
| 1N5806 | 109 | MICROSEMI | 1217 | DIODE RAPIDE 1N5806 A1237729 SEV | 具体要求 |
| 1N5806JANTXV | 14 | MICROSEMI USA | 9635 | DIO UFAST | 具体要求 |
| 1N5806JANTXV | 21 | MICROSEMI USA | 9946 | DIO UFAST | 具体要求 |
| 1N5806JANTXV | 82 | SENSITRON USA | 0127 | DIO UFAST | 具体要求 |
| 1N5806JANTXV | 47 | MICROSEMI USA | 9932 | DIO UFAST | 具体要求 |
| 1N5806JTXV | 14 | MICROSEMI USA | 0530 | DIO UFAST | 具体要求 |
| 1N5806JTXV | 71 | MICROSEMI USA | 0103 | DIO UFAST | 具体要求 |
| 1N5806JTXV | 47 | MICROSEMI USA | 0240 | DIO UFAST | 具体要求 |
| 1N5806US | 27 | MICROSEMI USA | 1222 | DIO UFAST | 具体要求 |
| 1N5806US | 24 | MICROSEMI USA | 1451 | DIO UFAST | 具体要求 |
| 1N5806US | 81 | 1332 | DIO AutreDIO | 具体要求 | |
| 1N5806US | 139 | 1222 | DIO UFAST | 具体要求 | |
| 1N5806US | 26 | MICROSEMI | - | DIO AMELF2 150V 2.5A | 具体要求 |
| 1N5809 | 82 | SEMTECH | 0147 | DIODE 1N5809 | 具体要求 |
| 1N5809JANTXV | 17 | MICROSEMI USA | 9831 | DIO UFAST | 具体要求 |
| 1N5809JTXV | 62 | SENSITRON USA | 0243 | DIO UFAST | 具体要求 |
| 1N5809JTXV | 45 | MICROSEMI USA | 0443 | DIO UFAST | 具体要求 |
| 1N5809JTXV | 10 | MICROSEMI USA | 0431 | DIO UFAST | 具体要求 |
| 1N5809US | 13 | SEMTECH USA | - | DIO UFAST | 具体要求 |
| 1N5811JANTXV | 59 | SENSITRON USA | 02 | DIO UFAST | 具体要求 |
| 1N5811US | 48 | 1725 | DIO UFAST | 具体要求 | |
| 1N5817 | 44 | - | DIODE REDRESSEMENT 1N5817 D05 | 具体要求 | |
| 1N5817 | 1457 | MOTOROLA | 99+ | DIODE-SI*REC-SCH-AXL 20V*20V*3A*0s 1N581 | 具体要求 |
| 1N5817 | 2082 | - | DIODE DE RED. DO204AL | 具体要求 | |
| 1N5817 | 37 | GI | 93+ | DIODE 1N5817 | 具体要求 |
| 1N5817 | 16 | DII | - | - | 具体要求 |
| 1N5817 | 25 | Motorola | 8408 | Diodes DO-41 Plastique | 具体要求 |
| 1N5817 | 324 | ON SEMICONDUCTOR | 2011 | Diode 1N 5817 | 具体要求 |
| 1N5817 | 6517 | VISHAY | - | TRAD DO41 Diode Schottky Vrrm:20V Ifmoy: | 具体要求 |
| 1N5817 | 59 | GENERAL-INSTRUMENT | 8914 | - | 具体要求 |
| 1N5817 | 460 | - | DIODE 1A 20V | 具体要求 | |
| 1N5817G | 100 | ON SEMI | 2012 | D-SCHOTTKY DO41 20V 1A | 具体要求 |
| 1N5817G | 61 | ON SEMI | 1335 | DSCHO20V1ADO41 | 具体要求 |
| 1N5817G | 1000 | ON | 0851 | Redresseur Schottky 20 V. 1 A 101375900 | 具体要求 |
| 1N5817RLG | 3250 | ON | 0649 | DIODE 1N5817 | 具体要求 |
| 1N5818 | 264 | MOTOROLA | - | DSCHO30V1ADO41 | 具体要求 |
| 1N5818 | 2700 | STM | - | DIODE 1N5818 30V 1A SCHOTT DO-41 | 具体要求 |
| 1N5818 | 70 | - | 1N5818 | 具体要求 | |
| 1N5818 | 406 | ON | - | DIODE 1N5818 SCHOTTKY MOTOROLA | 具体要求 |
| 1N5818 | 5223 | ON SEMI | - | DIODES 1N5818 DO41 SCHOTTKY | 具体要求 |
| 1N5818 | 38 | ST | 0546 | - | 具体要求 |
| 1N5818 | 48 | FAIRCHILD | - | - | 具体要求 |
| 1N5818 | 360 | ST | 0922 | DIODE 1A 40V | 具体要求 |
| 1N5819 | 515 | ST | - | - | 具体要求 |
| 1N5819 | 1540 | GENERAL-SEMICONDUCTOR | 0140 | DIODE-SI*REC-SCH-AXL 40V*40V*3A*0s 1N581 | 具体要求 |
| 1N5819 | 417 | MOTOROLA | 9709 | DIODE ZENER 1N5819 DO41 | 具体要求 |
| 1N5819 | 25 | MOTOROLA | 8501 | - | 具体要求 |
| 1N5819 | 10218 | - | DIODE SCHOTTKY 1N5819 DO41 | 具体要求 | |
| 1N5819 | 34 | GS | 9836 | DIODE ZENER 1N5819 DO41 | 具体要求 |
| 1N5819 | 4 | - | DIODE SCHOTTKY 1N 5819 1A 40V | 具体要求 | |
| 1N5819 | 108 | ON | 0046 | DIODE | 具体要求 |
| 1N5819 | 170 | MOTOROLA | 9841 | DIODE | 具体要求 |
| 1N5819 | 3 | ST MIRCRO | - | 1N5819 SCHOTTKY RECTIFIER 1A 40V DO-41 | 具体要求 |
| 1N5819-1 | 54 | CDI | 9945 | DIO SCHOTT | 具体要求 |
| 1N5819-1JANTXV | 36 | CDI | 9843 | DIO SCHOTT | 具体要求 |
| 1N5819-1JANTXV | 86 | CDI | 9843 | DIO SCHOTT | 具体要求 |
| 1N5819-1JANTXV | 22 | CDI | 9843 | DIO SCHOTT | 具体要求 |
| 1N5819-1JTXV | 26 | SENSITRON USA | 0225 | DIO SCHOTT | 具体要求 |
| 1N5819-E3 | 2971 | GS-VISHAY | 0609 | DIODE SCHOTTKY | 具体要求 |
| 1N5819 | 8 | FAIRCHILD | 18 | D SCHO 40V 1A DO41 | 具体要求 |
| 1N5819HW-7-F | 3000 | DIODE INC | - | - | 具体要求 |
| 1N5819RL | 3745 | ON | 0210 | DSCHO40V1ADO41 | 具体要求 |
| 1N5819RL | 4311 | ST | 0946 | DIODE SCHOTTKY | 具体要求 |
| 1N5819RL | 2494 | ON SEMI | - | DIODE ZENER 1N5819RL DO35 | 具体要求 |
| 1N5819RL | 4175 | MOTOROLA | - | TRAD DO41 diode Schottky Vrrm:40V 1A | 具体要求 |
| 1N5819RLG | 4423 | ON | 1024 | DIODE 1N5819 DO41 | 具体要求 |
| 1N5819UR-1JANTXV | 75 | CDI | 0108 | DIO SCHOTT | 具体要求 |
| 1N5820 | 1322 | MOTOROLA | 1993 | DIODE SCHOTTKY (axial) 20V | 具体要求 |
| 1N5820 | 75 | - | DIODE 1N5820 DO201AD | 具体要求 | |
| 1N5821 | 700 | ON SEMICONDUCTO | 2012 | DIODE SCHOTTKY 1N5821 3A/30V | 具体要求 |
| 1N5821RL | 1490 | ON SEMICONDUCTOR | 0432 | Diodes et redresseurs Schottky 3A 30V | 具体要求 |
| 1N5822 | 4 | ST-MICROELECTRONICS | - | 3A Axial | 具体要求 |
| 1N5822 | 19 | MOTOROLA | 9539 | DIODE SCHOTTKY 40VOLTS 3A. | 具体要求 |
| 1N5822 | 1616 | ST | 00+ | DIODE 1N5822 | 具体要求 |
| 1N5822 | 54 | - | SCHOTTKY 1N5822 DO201 AD | 具体要求 | |
| 1N5822 | 122 | MOTOROLA | 9928 | DIODE-SI*REC-SCH-AXL 40V*40V*9.4A*0s 1N5 | 具体要求 |
| 1N5822 | 26 | MOTOROLA | 99+ | DIODE-SI*REC-SCH-AXL 40V*40V*9.4A*0s 1N5 | 具体要求 |
| 1N5822 | 152 | VIS | - | Diode MOT 1N5822/MBR340P ou | 具体要求 |