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476 亿个元件
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元件目录
| 元件编号 | 数量 | 制造商 | 日期编码 | 描述 | |
|---|---|---|---|---|---|
| 1N5822 | 26 | MOTOROLA | 99+ | DIODE-SI*REC-SCH-AXL 40V*40V*9.4A*0s 1N5 | 具体要求 |
| 1N5822 | 152 | VIS | - | Diode MOT 1N5822/MBR340P ou | 具体要求 |
| 1N5822 | 3135 | - | DIODE SCHOTTKY 1N5822 DO201AD | 具体要求 | |
| 1N5822 | 32 | ST | 2011 | Diode Schottky 1N 5822 | 具体要求 |
| 1N5822 | 125 | ON-SEMI | 00+ | - | 具体要求 |
| 1N5822 | 10 | ST | - | DIODE 1N 5822 (Boit. D0201AD)(Philips:1 | 具体要求 |
| 1N5822 | 663 | ON | 1351 | DIODE | 具体要求 |
| 1N5822 | 430 | MOTOROLA | 9527 | DIODE | 具体要求 |
| 1N5822 | 800 | FAIRCHILD | 9934 | DIODE | 具体要求 |
| 1N5822-E3/54 | 16 | VISHAY-GS | 1209 | - | 具体要求 |
| 1N5822G | 70 | - | DIODE SCHOTTKY 1N5822G 267-03 | 具体要求 | |
| 1N5822RL | 838 | ON-SEMICONDUCTOR | 0248 | DIODE-SI*REC-SCH-AXL 40V*40V*9.4A*0s 1N5 | 具体要求 |
| 1N5822RL | 1500 | STM | 2007 | DIODE 1N5822 MOTOROLA | 具体要求 |
| 1N5822RLG | 2600 | ON | 0642 | T D 1N5822 DO27 | 具体要求 |
| 1N5824 | 10 | FAIRCHILD | - | Low Drop Power Schottky Rectifier 3A.Vr | 具体要求 |
| 1N5826 | 3 | MSC | 9330 | DIODE METAL | 具体要求 |
| 1N5831 | 23 | MOTOROLA | 8936 | DIODE 1N5831 | 具体要求 |
| 1N5831 | 76 | MOTOROLA | 8936 | DIODE METAL | 具体要求 |
| 1N5907 | 1 | THOMSON | 8603 | DIODE TRANZORB 5 VOLTS | 具体要求 |
| 1N5908 | 78 | ON-SEMICONDUCTOR | 0146 | DIODE 1N5908 | 具体要求 |
| 1N5908 | 15 | - | Diode Transil 1N5908 - 5V 1500W - Uni-di | 具体要求 | |
| 1N5908 | 994 | VISHAY | - | TRAD DO-13 Transil unidirectionnel Vr:5V | 具体要求 |
| 1N5908 | 234 | - | DIODE 1N5908 | 具体要求 | |
| 1N5908G | 72 | ON | 0622 | DIODE 1N5908 5V 1500W | 具体要求 |
| 1N5908RL4 | 107 | MOTOROLA | 9705 | TRANSIENT SUPRESSOR DIODE 5V | 具体要求 |
| 1N6036A | 48 | Thomson | 8638 | Transient Voltage Suppressors DO-13 Méta | 具体要求 |
| 1N6036A | 70 | DSI | - | 1N6036A DIODE | 具体要求 |
| 1N6036A | 99 | SGS-THOMSON | 8826 | - | 具体要求 |
| 1N6043A | 35 | Thomson | 8717 | Transient Voltage Suppressors DO-13 Méta | 具体要求 |
| 1N6051 | 100 | Thomson | 8608 | Transient Voltage Suppressors DO-13 Méta | 具体要求 |
| 1N6055A | 57 | NJS | 0320 | DIODE TRANSIL BI 1N6055A DO13 | 具体要求 |
| 1N6057A | 87 | ST | 89+ | DIODE TRANSIL BI 1N6057A DO13 | 具体要求 |
| 1N6057A | 9 | SIEMENS | - | DIODE TRANSIL | 具体要求 |
| 1N6060A | 38 | MICROSEMI | 1333 | DIODE TRANSIL METAL | 具体要求 |
| 1N6094JTX | 100 | MICROPAC USA | 1250 | LAMP LED | 具体要求 |
| 1N6098 | 2 | MOTOROLA | 9131 | DIODE METAL 50A | 具体要求 |
| 1N6110 | 2 | - | DIOD.MSC ANA 15V 0.6KW 1N6110 | 具体要求 | |
| 1N6110 | 111 | MICROSEMI | - | DIO AXIAL 13.5V 75MA REGUL | 具体要求 |
| 1N6110 | 111 | SEMTECH | - | DIO AXIAL 13.5V 75MA REGUL | 具体要求 |
| 1N6124 | 5 | - | DIOD MSC ANA 56V 0.6KW 1N6124 | 具体要求 | |
| 1N6124 | 83 | JOINT E | - | DIODE PROTEC.1N6124 | 具体要求 |
| 1N6124 | 83 | MICROSEMI | - | DIODE PROTEC.1N6124 | 具体要求 |
| 1N6124 | 83 | SEMTECH | - | DIODE PROTEC.1N6124 | 具体要求 |
| 1N6124 | 83 | SENSITRON | - | DIODE PROTEC.1N6124 | 具体要求 |
| 1N6128 | 1 | MICROSEMI | 98 | - | 具体要求 |
| 1N6155AUS | 10 | MSC | 1517 | - | 具体要求 |
| 1N6169 | 2 | - | DIODE | 具体要求 | |
| 1N6263 | 244 | ST | - | D.SCHOT. SD101A DO.35 | 具体要求 |
| 1N6263 | 3390 | SGS-THOMSON MICROELE | - | DIODE DE COMMUTATION 1N6263 | 具体要求 |
| 1N6263 | 9 | - | - | - | 具体要求 |
| 1N6263 | 700 | ST | - | DIODE | 具体要求 |
| 1N6277A | 27 | GENERAL-SEMICONDUCTOR | 03+ | - | 具体要求 |
| 1N6277A-E3/54 | 20 | VISHAY SEMICONDUCTOR | - | DIODE ZENER | 具体要求 |
| 1N6279A | 50 | FAGOR | - | 1.5KE22A | 具体要求 |
| 1N6282A | 83 | On Semi | 0810 | TRANSIL UNI | 具体要求 |
| 1N6282A | 94 | GENERAL-INSTRUMENT | 95+ | - | 具体要求 |
| 1N6284 | 295 | MSC | - | DIODE 1N6284 | 具体要求 |
| 1N6284A | 5 | FAGOR | - | TRANSIL UNI | 具体要求 |
| 1N6284A | 809 | FAGOR | - | TRANSIL UNI | 具体要求 |
| 1N6287CA | 3 | FAGOR | - | DIODE TRANSIL UNIDIR 1500W 1MS | 具体要求 |
| 1N6289A | 39 | MOTOROLA | - | DIODE ZENER 1N6289A DO-201 | 具体要求 |
| 1N6289CA | 33 | FAGOR | - | DIODE ZENER BIDIRECTIONNELLE | 具体要求 |
| 1N6290A | 600 | GENERAL SEMICONDUCTOR | 9904 | TRANSIENT SUPPRESSOR DIODE | 具体要求 |
| 1N6290A | 321 | ON SEMI | - | TRANSIL 53V 100A /ref SGC1N6290A | 具体要求 |
| 1N6293A | 60 | MOTOROLA | 9913 | DIODE TRANSIL DO-204AR | 具体要求 |
| 1N6294A | 895 | MOTOROLA | 9930 | DIOD.TRAN.RAPIDE 91V UNIDIRECT . MOTOROL | 具体要求 |
| 1N6298A | 591 | FAGOR | - | TRANSIL UNI | 具体要求 |
| 1N6300A | 25 | - | - | - | 具体要求 |
| 1N6301A | 2 | ON | 0124 | TRANSIL UNI | 具体要求 |
| 1N6301A | 1130 | ON | 0124 | TRANSIL UNI | 具体要求 |
| 1N6302A | 955 | GS | 9904 | TRANSIL 1.5KE180 180V 1.5KW | 具体要求 |
| 1N630A | 1795 | MOT | 95+ | TRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIR | 具体要求 |
| 1N6316US | 23 | MICROSEMI | - | DIODE ZENER 1N6316 4.7V 0.5W B-SQ MELF | 具体要求 |
| 1N6316US | 34 | MICROSEMI | 0423 | Diode zener 4.7V CMS 1N6316US | 具体要求 |
| 1N6318JANS | 12 | MICROSEMI USA | 0513 | DIO ZENER | 具体要求 |
| 1N6319JANTX | 11 | - | - | - | 具体要求 |
| 1N6321US-JANTXV | 1 | MICROSEMI | - | Diode zener 7.5V CMS B-MELF 1N6321US-JAN | 具体要求 |
| 1N6322JTXV | 5 | MICROSEMI USA | 0303 | DIO ZENER | 具体要求 |
| 1N6324US | 104 | MSC | - | Diode zener 10V CMS 1N6324US | 具体要求 |
| 1N6326JANTXV | 15 | MICROSEMI USA | 0240 | DIO ZENER | 具体要求 |
| 1N6326JANTXV | 3 | MICROSEMI USA | 9715 | DIO ZENER | 具体要求 |
| 1N6326JANTXV | 28 | MICROSEMI USA | 9937 | DIO ZENER | 具体要求 |
| 1N6328US | 29 | MICROSEMI | - | DIODE 15V B-MELF 1N6328US FAB : MICROSEM | 具体要求 |
| 1N6329 | 16 | MICROSEMI | - | DIODE 16V DO35 1N6329 FAB : MICROSEMI | 具体要求 |
| 1N6329-JANTXV | 2 | MICROSEMI | - | DIODE 16V DO35 1N6329-JANTXV FAB : MICRO | 具体要求 |
| 1N6330 | 1 | MSC | - | Diode zener 18V 1N6330 | 具体要求 |
| 1N6330 | 6 | MICROSEMI | - | - | 具体要求 |
| 1N6330US | 176 | MICROSEMI | - | Diode zener 18V CMS 1N6330US | 具体要求 |
| 1N6330US | 184 | MICROSEMI | 0407 | DIODE 1N6330US BOITIER B-MELF | 具体要求 |
| 1N6334US | 60 | MICROSEMI | 0402 | DIODE 1N6334US BOITIER B-MELF | 具体要求 |
| 1N6334US-JANTXV | 1 | MICROSEMI | - | DIODE 15V B-MELF 1N6334US-JANTXV FAB : M | 具体要求 |
| 1N6348 | 5 | MICROSEMI USA | 0130 | DIO ZENER | 具体要求 |
| 1N6373 | 41 | 2006 | DIODE TRANSIL 1N6373 / | 具体要求 | |
| 1N6373 | 28 | GENERAL-SEMICONDUCTOR | - | - | 具体要求 |
| 1N6376 | 16 | - | - | DIODE TRANSIL 1N6376 | 具体要求 |
| 1N6376 | 30 | GS | 00+ | DIODE TRANSIL ICTE 12/1 / ICTE 12/1 | 具体要求 |
| 1N645 | 5 | GI | 8840 | - | 具体要求 |
| 1N645 | 206 | BKC | - | DIODE DE REDRESSEMENT BKC 551DIODE | 具体要求 |
| 1N645 | 53 | GENERAL INSTRUMENT | - | DIODE 1N645 | 具体要求 |
| 1N645 | 400 | - | - | 具体要求 | |
| 1N645 | 357 | - | - | - | 具体要求 |
| 1N645 | 66 | GENERAL-INSTRUMENT | - | - | 具体要求 |
| 1N645 | 100 | GI | 9015 | DIODE | 具体要求 |
| 1N645-1 | 1 | MSC | - | DIODE 1N645 | 具体要求 |
| 1N645BKC | 2 | - | DIODE 1N645 | 具体要求 | |
| 1N646 | 38 | - | 8219 | - | 具体要求 |
| 1N646 | 108 | SSC et SILEC | - | DIODE | 具体要求 |
| 1N6467JANTXV | 20 | MICROSEMI USA | 9950 | DIO TRANS | 具体要求 |
| 1N647 | 73 | - | DIODE 1N647 | 具体要求 | |
| 1N647 | 721 | - | DIODE 1N647 | 具体要求 | |
| 1N647 | 11 | THOMSON | 8112 | DIODE | 具体要求 |
| 1N647 | 402 | BKC | - | - | 具体要求 |
| 1N647 | 36 | THOMSON | 8112 | DIODE 1N647 | 具体要求 |
| 1N647 | 105 | GP | 8132 | DIODE | 具体要求 |
| 1N647 | 97 | THOMSON | 8504 | DIODE | 具体要求 |
| 1N6475JANTXV | 24 | MICROSEMI USA | 026 | DIO TRANS | 具体要求 |
| 1N6475JTXV | 16 | MICROSEMI USA | 026 | DIO TRANS | 具体要求 |
| 1N6478 | 9700 | General Semiconductor | 8445 | Diodes DO-213AB Glass | 具体要求 |
| 1N6483/26 | 29610 | VISHAY | 04 | DIODE REDR.CMS 800V 1A | 具体要求 |
| 1N649 | 15 | GENERAL-INSTRUMENT | 8749 | - | 具体要求 |
| 1N649 | 2700 | SSC | 7820 | DIODE | 具体要求 |
| 1N649 | 18 | GI | 8920 | DIODE | 具体要求 |
| 1N649 | 50 | GI | 9214 | DIODE | 具体要求 |
| 1N649 | 275 | ESM | - | DIODE | 具体要求 |
| 1N6492 | 27 | MICROSEMI USA | - | DIO NULL | 具体要求 |
| 1N6627JANTXV | 28 | SENSITRON USA | 9808 | DIO UFAST | 具体要求 |
| 1N6627JANTXV | 30 | MICROSEMI USA | 0111 | DIO UFAST | 具体要求 |
| 1N6642 | 126 | MICROSEMI USA | 0215 | DIO DIODE | 具体要求 |
| 1N6642JANTXV | 53 | MICROSEMI USA | 0332 | DIO DIODE | 具体要求 |
| 1N6642JTX | 25 | - | - | - | 具体要求 |
| 1N6642US | 1 | BKC | 9716 | 1N6642USHRS | 具体要求 |
| 1N6672JANTXV | 3 | MICROSEMI USA | 9749 | DIO UFAST | 具体要求 |
| 1N6672JANTXV | 1 | MICROSEMI USA | 9749 | DIO UFAST | 具体要求 |
| 1N723A | 18 | MICROSEMI CORPORATION | - | TRAD DO35 Diode zener Vz:24V Pmax:250mW | 具体要求 |
| 1N747A | 28 | THOMSON | - | DIODE SI 1N747A 3.6V | 具体要求 |
| 1N749A | 382 | 92 | 1N749A DIODE | 具体要求 | |
| 1N751A | 97 | THOMSON | - | DIODE. MOTOROLA 1N751A 5.1V | 具体要求 |
| 1N751A | 4 | MOTOROLA | 9609 | DIODE. MOTOROLA 1N751A 5.1V | 具体要求 |
| 1N752A | 20 | 1992 | 1N752A DIODE | 具体要求 | |
| 1N753 | 49 | - | DIODE | 具体要求 | |
| 1N753A | 7 | Thomson CSF | 8026 | Diodes Zeners Casse-299 Glass | 具体要求 |
| 1N753A | 6 | THOMSON | - | DIODE 1N753A 0W4 6V2 | 具体要求 |
| 1N753A | 181 | MOTOROLA | - | DIODE 1N 753A | 具体要求 |
| 1N754A-DO35 | 28 | MOTO | - | 1N754A-DO35 | 具体要求 |
| 1N756A | 65 | Thomson CSF | 8126 | Diodes Zeners Casse-299 Glass | 具体要求 |
| 1N756A | 1500 | STM | - | - | 具体要求 |
| 1N758A | 65 | Motorola | 8411 | Diodes Zeners DO-35 Glass | 具体要求 |
| 1N78 | 2 | MICROWAVE | - | - | 具体要求 |
| 1N821 | 60 | A.P.D | - | DIODE ZENER 6.2V 100PPM A.P.D 551D | 具体要求 |
| 1N821 | 91 | ST | - | DIODE | 具体要求 |
| 1N821A | 2 | NTE ELECTRONICS INC. | 2011 | D-1N821 DO34 DIODE REFERENCE 6.2V 400mW | 具体要求 |
| 1N823 | 26 | ST | - | - | 具体要求 |
| 1N823 | 3 | THOMSON | - | DIODE | 具体要求 |
| 1N823A | 177 | CDI | N/A | - | 具体要求 |
| 1N823A | 13 | 0110 | DIODE ZENER | 具体要求 | |
| 1N825 | 53 | ST | - | 1N825 | 具体要求 |
| 1N825 | 30 | Thomson | 8226 | Diodes Zeners DO-35 Glass | 具体要求 |
| 1N825 | 179 | MICROSEMI | - | DIODE 1N825 LF | 具体要求 |
| 1N825 | 65 | MOTOROLA | 9218 | 1N825 DIODE | 具体要求 |
| 1N825A | 30 | Thomson | 8542 | Diodes Zeners DO-35 Glass | 具体要求 |
| 1N825A | 15 | CDI | - | - | 具体要求 |
| 1N825A | 14 | ST | - | DIODE | 具体要求 |
| 1N827 | 1 | ST | - | 1N827 | 具体要求 |
| 1N827A | 15 | MICROSEMI | - | DIODE REF. TENSION DELTA 9mV | 具体要求 |
| 1N827A | 360 | MICROSEMI | - | DIODE 1N827 | 具体要求 |
| 1N829 | 5 | MICROSEMI | - | DIODE REF. TENSION DELTA 5mV | 具体要求 |
| 1N829 | 56 | MSC | - | DIODE REF. TENSION DELTA 5mV | 具体要求 |
| 1N82AG | 38 | - | - | - | 具体要求 |
| 1N914 | 276 | - | DIODE 1N914 REDRESSE. | 具体要求 | |
| 1N914B | 5 | Fairchild | 8526 | Diodes DO-35 Glass | 具体要求 |
| 1N914B | 47 | - | DIODE | 具体要求 | |
| 1N935A | 1000 | STM | - | - | 具体要求 |
| 1N936A | 3034 | MSC | - | DIODE ZENER 1N936A | 具体要求 |
| 1N937A | 15 | THOMSON | - | - | 具体要求 |
| 1N937A | 74 | ST | - | 1N937A DIODE | 具体要求 |
| 1N939B | 2 | CDI | 00 | DIODE CDI 9V D035 1N939B | 具体要求 |
| 1N941 | 100 | Thomson | 8026 | Diodes Zeners DO-35 Glass | 具体要求 |
| 1N941A | 18 | MOTOROLA | 87 | 1N941A DIODE | 具体要求 |
| 1N944 | 8 | MOTOROLA | 8244 | - | 具体要求 |
| 1N958 | 71 | PHILIPS NXP | 2007 | 1N958/BZX55C7V5 DIODE | 具体要求 |
| 1N959 | 15 | 2002 | 1N959/BZX55C8V2 DIODE | 具体要求 | |
| 1N959B | 4 | Thomson | 8426 | Diodes Zeners DO-35 Glass | 具体要求 |
| 1N960B | 25 | Thomson | 8512 | Diodes Zeners DO-35 Glass | 具体要求 |
| 1N962B | 25 | Thomson | 8711 | Diodes Zeners DO-35 Glass | 具体要求 |
| 1N962B-1JAN | 16 | MICRO | - | - | 具体要求 |
| 1N965B | 132 | N/A | - | 具体要求 | |
| 1N965B | 1165 | Thomson | 8526 | Diodes Zeners DO-35 Glass | 具体要求 |
| 1N966B | 15 | 1997 | 1N966B/BZX55C16 DIODE | 具体要求 | |
| 1N967B | 13 | - | - | - | 具体要求 |
| 1N969B | 50 | SSC | 8326 | Diodes Zeners DO-35 Glass | 具体要求 |
| 1N970B | 864 | - | - | 具体要求 | |
| 1N971B | 4350 | - | - | 具体要求 | |
| 1N973B | 70 | - | - | 具体要求 | |
| 1N973B | 35 | FAIRCHILD | - | SEMI-CONDUCTEUR.DIO | 具体要求 |
| 1N973B | 12 | THOMSON | - | DIODE | 具体要求 |
| 1N973B | 68 | THOMSON | - | DIODE | 具体要求 |
| 1N975B | 500 | Thomson | 8526 | Diodes Zeners DO-35 Glass | 具体要求 |
| 1N993B | 30 | Thomson | 8326 | Diodes DO-35 Glass | 具体要求 |
| 1N-EC04 | 2083 | - | Cond. Cér. 1nF EC04 en bande | 具体要求 | |
| 1P02557 | 741 | - | PL MIC 2V BLANC | 具体要求 |